


Microsemi
1214-110M
283-1214-110M
PDF Datasheet
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, HERMETC SEALED PACKAGE-3
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Collector Emitter Breakdown Voltage
75V
Gain
7.4dB
Lead Free
Lead Free
Max Collector Current
8A
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
270W
Mount
Chassis Mount, Screw
1214-110M Description
RF Transistor NPN 75V 8A 1.2GHz ~ 1.4GHz 270W Chassis Mount 55KT
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