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1214-300M
283-1214-300M
PDF Datasheet
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, HERMETIC SEALED, CASE 55ST, 2 PIN
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Tech Specifications
Collector Emitter Breakdown Voltage
50V
Gain
7dB
Max Collector Current
4A
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
88W
Mount
Chassis Mount, Screw
Packaging
Bulk
1214-300M Description
RF Transistor NPN 50V 4A 1.2GHz ~ 1.4GHz 88W Chassis Mount 55ST
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