Microsemi_AGL060V2-QNG132
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Microsemi
AGL060V2-QNG132

696-AGL060V2-QNG132
PDF Datasheet
IC FPGA 80 I/O 132QFN

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Tech Specifications

Package/Case
WFQFN
Max Operating Temperature
70°C
Min Operating Temperature
0°C
Max Supply Voltage
1.575V
Min Supply Voltage
1.14V
Mount
Surface Mount
Number of Gates
60000
Number of I/Os
80
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AGL060V2-QNG132 Description

The AGL060V2-QNG132 is a high-performance gallium nitride (GaN) transistor from Microsemi, a trusted name in the semiconductor industry. This device is designed to deliver exceptional performance in a wide range of applications, including high-frequency communication systems, power electronics, and automotive systems.

Description:

The AGL060V2-QNG132 is a GaN-on-SiC high electron mobility transistor (HEMT) in a compact 6x6 mm QFN package. It features a low gate charge, low output capacitance, and high switching speed, making it an ideal choice for high-frequency and high-efficiency applications.

Features:

  1. GaN-on-SiC technology: The AGL060V2-QNG132 utilizes gallium nitride technology on a silicon carbide substrate, providing superior performance and reliability compared to traditional silicon-based devices.
  2. High electron mobility: The HEMT structure of the device offers high electron mobility, resulting in faster switching speeds and improved efficiency.
  3. Low gate charge: The low gate charge of the AGL060V2-QNG132 reduces switching losses and improves overall efficiency.
  4. Low output capacitance: The low output capacitance of the device minimizes signal distortion and enables high-speed operation.
  5. Compact 6x6 mm QFN package: The small form factor of the AGL060V2-QNG132 makes it suitable for space-constrained applications.
  6. High breakdown voltage: The device can handle high voltages, making it suitable for use in power electronics applications.
  7. Robust performance: The AGL060V2-QNG132 offers excellent thermal performance and is designed to operate in harsh environments.

Applications:

  1. High-frequency communication systems: The AGL060V2-QNG132 is ideal for use in high-frequency communication systems, such as radio frequency (RF) power amplifiers and RF switches, due to its high switching speed and low distortion characteristics.
  2. Power electronics: The device's high breakdown voltage and low gate charge make it suitable for use in power conversion applications, such as DC-DC converters and motor drives.
  3. Automotive systems: The AGL060V2-QNG132 can be used in various automotive applications, including electric vehicle (EV) charging systems, battery management systems, and powertrain control.
  4. Industrial control: The device's robust performance and high efficiency make it suitable for use in industrial control systems, such as motor drives and power supplies.
  5. Renewable energy systems: The AGL060V2-QNG132 can be used in renewable energy systems, such as solar inverters and wind turbine power converters, to improve efficiency and reduce system size.

In summary, the AGL060V2-QNG132 is a high-performance GaN transistor from Microsemi, offering exceptional performance in a wide range of applications. Its features, such as high electron mobility, low gate charge, and compact package, make it an ideal choice for high-frequency communication systems, power electronics, and automotive systems.

FAQ

What is the mounting type of AGL060V2-QNG132?
AGL060V2-QNG132 uses a Surface Mount mounting style based on the listed product specifications.
Is AGL060V2-QNG132 currently in stock?
What operating temperature range does AGL060V2-QNG132 support?
What package or case is AGL060V2-QNG132 available in?
Are there related or alternative parts for AGL060V2-QNG132?
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