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Microsemi
APT10035B2LLG
278-APT10035B2LLG
PDF Datasheet
Power Field-Effect Transistor, 28A I(D), 1000V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TMAX-3
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Tech Specifications
Package/Case
TO-247-3
Continuous Drain Current (ID)
28A
Current Rating
28A
Drain to Source Voltage (Vdss)
1kV
Fall Time
9ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
5.185nF
Lead Free
Lead Free
APT10035B2LLG Description
N-Channel 1000 V 28A (Tc) 690W (Tc) Through Hole T-MAX™ [B2]
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