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Microsemi
APT10M09B2VFRG
278-APT10M09B2VFRG
PDF Datasheet
Power Field-Effect Transistor, 100A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3
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Tech Specifications
Package/Case
TO-247-3
Continuous Drain Current (ID)
100A
Current Rating
100A
Drain to Source Voltage (Vdss)
100V
Input Capacitance
9.875nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
APT10M09B2VFRG Description
N-Channel 100 V 100A (Tc) 625W (Tc) Through Hole T-MAX™ [B2]
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