Microsemi_APT50GT120B2RDLG
original

Microsemi
APT50GT120B2RDLG

279-APT50GT120B2RDLG
PDF Datasheet
Insulated Gate Bipolar Transistor, 106A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT, TO-247, TMAX-3

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Tech Specifications

Package/Case
TO-247-3
Collector Emitter Breakdown Voltage
1.2kV
Collector-emitter Voltage-Max
3.7V
Input Type
STANDARD
Max Collector Current
106A
Max Power Dissipation
694W
Mount
Through Hole
Packaging
Rail/Tube
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APT50GT120B2RDLG Description

IGBT NPT 1200 V 106 A 694 W Through Hole

FAQ

What voltage specification is listed for APT50GT120B2RDLG?
The listed voltage-related specification for APT50GT120B2RDLG is 1.2kV.
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Is APT50GT120B2RDLG currently in stock?
What is APT50GT120B2RDLG?
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