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Microsemi
APT53N60SC6
278-APT53N60SC6
PDF Datasheet
Power Field-Effect Transistor, 53A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3
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Tech Specifications
Package/Case
TO-263-3
Continuous Drain Current (ID)
53A
Drain to Source Voltage (Vdss)
600V
Fall Time
74ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.02nF
Lead Free
Lead Free
Max Operating Temperature
150°C
APT53N60SC6 Description
N-Channel 600 V 53A (Tc) 417W (Tc) Surface Mount D3Pak
FAQ
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