Microsemi_APTGF300DA120G
original

Microsemi
APTGF300DA120G

297-APTGF300DA120G
PDF Datasheet
Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP6, MODULE-5

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Tech Specifications

Package/Case
Module
Collector Emitter Breakdown Voltage
1.2kV
Collector-emitter Voltage-Max
3.9V
Input
Standard
Input Capacitance
21nF
Max Collector Current
400A
Max Power Dissipation
1.78kW
Mount
Chassis Mount, Screw
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APTGF300DA120G Description

IGBT Module NPT Single 1200 V 400 A 1780 W Chassis Mount SP6

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