Microsemi_APTGL180A1202G
original

Microsemi
APTGL180A1202G

297-APTGL180A1202G
Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES

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Tech Specifications

Package/Case
Module
Collector Emitter Breakdown Voltage
1.2kV
Collector-emitter Voltage-Max
2.2V
Input
Standard
Input Capacitance
9.3nF
Max Collector Current
220A
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
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APTGL180A1202G Description

IGBT Module Trench Field Stop Half Bridge 1200 V 220 A 750 W Chassis Mount SP2

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