Microsemi
APTGT25A120T1G
297-APTGT25A120T1G
PDF Datasheet
Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP1, 12 PIN
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Tech Specifications
Package/Case
Module
Collector Emitter Breakdown Voltage
1.2kV
Collector-emitter Voltage-Max
2.1V
Input
Standard
Input Capacitance
1.8nF
Max Collector Current
40A
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
APTGT25A120T1G Description
IGBT Module Trench Field Stop Half Bridge 1200 V 40 A 156 W Chassis Mount SP1
FAQ
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What is APTGT25A120T1G?
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