Microsemi
APTM100DA18CT1G

278-APTM100DA18CT1G
Trans MOSFET N-CH 1KV 40A 10-Pin Case SP-1

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ISO14001
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Tech Specifications

Continuous Drain Current (ID)
40A
Drain to Source Voltage (Vdss)
1kV
Fall Time
70ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
14.8nF
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
657W
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APTM100DA18CT1G Description

N-Channel 1000 V 40A (Tc) 657W (Tc) Chassis Mount SP1

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