Microsemi_APTM120DA56T1G
Microsemi_APTM120DA56T1G
original

Microsemi
APTM120DA56T1G

278-APTM120DA56T1G
MOSFET N-CH 1200V 18A SP1

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Tech Specifications

Continuous Drain Current (ID)
18A
Drain to Source Voltage (Vdss)
1.2kV
Fall Time
48ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
7.736nF
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
390W
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APTM120DA56T1G Description

N-Channel 1200 V 18A (Tc) 390W (Tc) Chassis Mount SP1

FAQ

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