Microsemi_JAN1N5807US
original

Microsemi
JAN1N5807US

2085-JAN1N5807US
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DIODE GEN PURP 50V 6A B-MELF
24 Weeks

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ISO9001
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ISO14001
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Tech Specifications

Average Rectified Current
6A
Package/Case
MELF
Forward Current
6A
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Max Repetitive Reverse Voltage (Vrrm)
50V
Max Reverse Current
5uA
Max Reverse Voltage (DC)
50V
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JAN1N5807US Description

DIODE GEN PURP 50V 6A B-MELF

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