Microsemi_JAN1N6640
Microsemi_JAN1N6640
original

Microsemi
JAN1N6640

2085-JAN1N6640
PDF Datasheet
DIODE GEN PURP 50V 300MA AXIAL
23 Weeks

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APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Contact Plating
Tin, Lead
Forward Current
300mA
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Max Repetitive Reverse Voltage (Vrrm)
50V
Mount
Through Hole
RoHS Compliant
No
RoHS
Not Compliant

JAN1N6640 Description

DIODE GEN PURP 50V 300MA AXIAL

FAQ

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