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Microsemi
JAN2N2221AL
276-JAN2N2221AL
PDF Datasheet
Trans GP BJT NPN 50V 0.8A 3-Pin TO-18
30 Weeks
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Tech Specifications
Collector Base Voltage (VCBO)
75V
Max Collector Current
800mA
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Mount
Through Hole
Packaging
Bulk
Radiation Hardening
No
JAN2N2221AL Description
Bipolar (BJT) Transistor NPN 50 V 800 mA 500 mW Through Hole TO-18 (TO-206AA)
FAQ
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Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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