Microsemi_JAN2N3507A
Microsemi_JAN2N3507A
original

Microsemi
JAN2N3507A

2087-JAN2N3507A
PDF Datasheet
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3
22 Weeks

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ISO9001
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ISO45001
ISO14001
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Tech Specifications

Collector Base Voltage (VCBO)
80V
Max Collector Current
3A
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
1W
Mount
Through Hole
Packaging
Bulk
Radiation Hardening
No
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JAN2N3507A Description

Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3

FAQ

What is the mounting type of JAN2N3507A?
JAN2N3507A uses a Through Hole mounting style based on the listed product specifications.
Are there related or alternative parts for JAN2N3507A?
What voltage specification is listed for JAN2N3507A?
Is JAN2N3507A currently in stock?
What operating temperature range does JAN2N3507A support?
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