Microsemi_JAN2N3960
original

Microsemi
JAN2N3960

276-JAN2N3960
Trans GP BJT NPN 12V 3-Pin TO-18

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Tech Specifications

Collector Base Voltage (VCBO)
20V
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
400mW
Mount
Through Hole
Packaging
Bulk
Radiation Hardening
No
RoHS Compliant
No
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JAN2N3960 Description

Bipolar (BJT) Transistor NPN 12 V 400 mW Through Hole TO-18 (TO-206AA)

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