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Microsemi
JAN2N4957
283-JAN2N4957
PDF Datasheet
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, PNP, TO-72, HERMETIC SEALED, METAL CAN-4
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Tech Specifications
Package/Case
TO-72-3
Collector Emitter Breakdown Voltage
30V
Gain
25dB
Max Collector Current
30mA
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
200mW
Mount
Through Hole
JAN2N4957 Description
RF Transistor PNP 30V 30mA 200mW Through Hole TO-72
FAQ
What voltage specification is listed for JAN2N4957?
The listed voltage-related specification for JAN2N4957 is 30V.
Is JAN2N4957 currently in stock?
What operating temperature range does JAN2N4957 support?
What is JAN2N4957?
What package or case is JAN2N4957 available in?
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