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Microsemi
JAN2N5581
2087-JAN2N5581
PDF Datasheet
Bipolar Transistors - BJT Small-Signal BJT
22 Weeks
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Tech Specifications
Collector Base Voltage (VCBO)
75V
Contact Plating
Tin, Lead
Max Collector Current
800mA
Max Operating Temperature
200°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Through Hole
RoHS Compliant
No
JAN2N5581 Description
Bipolar Transistors - BJT Small-Signal BJT
FAQ
What is JAN2N5581?
JAN2N5581 is a Bipolar (BJT) from Microsemi. This product page provides its main specifications, pricing information, availability, and inquiry options.
What operating temperature range does JAN2N5581 support?
Are there related or alternative parts for JAN2N5581?
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