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Microsemi
JAN2N5685
2087-JAN2N5685
PDF Datasheet
Power Bipolar Transistor, 50A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, TO-3, 2 PIN
36 Weeks
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Tech Specifications
Collector Base Voltage (VCBO)
60V
Max Collector Current
50A
Max Operating Temperature
200°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Packaging
Bulk
Radiation Hardening
No
JAN2N5685 Description
Power Bipolar Transistor, 50A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, TO-3, 2 PIN
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