


Microsemi
JAN2N6249T1
276-JAN2N6249T1
PDF Datasheet
Power Bipolar Transistor, 10A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, TO-254, 3 PIN
22 Weeks
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible qualityTech Specifications
Collector Base Voltage (VCBO)
300V
Max Collector Current
10A
Max Operating Temperature
200°C
Min Operating Temperature
-55°C
Max Power Dissipation
6W
Mount
Through Hole
Packaging
Bulk
Radiation Hardening
No
JAN2N6249T1 Description
Bipolar (BJT) Transistor NPN 200 V 10 A 6 W Through Hole TO-254AA
FAQ
What is the mounting type of JAN2N6249T1?
JAN2N6249T1 uses a Through Hole mounting style based on the listed product specifications.
What voltage specification is listed for JAN2N6249T1?
What operating temperature range does JAN2N6249T1 support?
What is the standard lead time for JAN2N6249T1?
Is JAN2N6249T1 currently in stock?



.png)










.png?x-oss-process=image/format,webp/resize,h_32)










