German
Japanese
Portuguese
Korea
Mexico
Dutch
Microsemi
JAN2N6250T1
276-JAN2N6250T1
PDF Datasheet
Power Bipolar Transistor, 10A I(C), 275V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, TO-254, 3 PIN
22 Weeks
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible quality
.png)
Tech Specifications
Collector Base Voltage (VCBO)
375V
Max Collector Current
10A
Max Operating Temperature
200°C
Min Operating Temperature
-55°C
Max Power Dissipation
6W
Mount
Through Hole
Packaging
Bulk
Radiation Hardening
No
JAN2N6250T1 Description
Bipolar (BJT) Transistor NPN 275 V 10 A 6 W Through Hole TO-254AA
FAQ
Is JAN2N6250T1 currently in stock?
JAN2N6250T1 is currently available on an inquiry basis. Please contact us for the latest stock information.
Are there related or alternative parts for JAN2N6250T1?
What is the mounting type of JAN2N6250T1?
What operating temperature range does JAN2N6250T1 support?
What is the standard lead time for JAN2N6250T1?
Quick Quote
ADD TO RFQ LIST
Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately
QUICK RFQ
.png?x-oss-process=image/format,webp/resize,h_32)
