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Microsemi
JAN2N6770
278-JAN2N6770
PDF Datasheet
Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN
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Tech Specifications
Package/Case
TO-204AE
Contact Plating
Tin, Lead
Continuous Drain Current (ID)
12A
Drain to Source Voltage (Vdss)
500V
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
JAN2N6770 Description
N-Channel 500 V 12A (Tc) 4W (Ta), 150W (Tc) Through Hole TO-204AE (TO-3)
FAQ
What voltage specification is listed for JAN2N6770?
The listed voltage-related specification for JAN2N6770 is 500V.
What operating temperature range does JAN2N6770 support?
What is the mounting type of JAN2N6770?
What package or case is JAN2N6770 available in?
Are there related or alternative parts for JAN2N6770?
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