Microsemi_JAN2N6782
original

Microsemi
JAN2N6782

278-JAN2N6782
PDF Datasheet
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.61ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, FORMERLY TO-39, 3 PIN

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Tech Specifications

Package/Case
TO-39
Continuous Drain Current (ID)
3.5A
Drain to Source Voltage (Vdss)
100V
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
15W
Mount
Through Hole
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JAN2N6782 Description

N-Channel 100 V 3.5A (Tc) 800mW (Ta), 15W (Tc) Through Hole TO-39

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JAN2N6782 is available in the TO-39 package / case.
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