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Microsemi
JAN2N6849
278-JAN2N6849
PDF Datasheet
Small Signal Field-Effect Transistor, 6.5A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
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Tech Specifications
Package/Case
TO-39
Contact Plating
Tin, Lead
Continuous Drain Current (ID)
6.5A
Drain to Source Voltage (Vdss)
100V
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
JAN2N6849 Description
P-Channel 100 V 6.5A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-39
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