Microsemi_JAN2N7225U
original

Microsemi
JAN2N7225U

285-JAN2N7225U
Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, U3, U PKG-3

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ISO14001
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Tech Specifications

Continuous Drain Current (ID)
27.4A
Drain to Source Voltage (Vdss)
200V
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Surface Mount
Package Quantity
1
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JAN2N7225U Description

Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, U3, U PKG-3

FAQ

What is the mounting type of JAN2N7225U?
JAN2N7225U uses a Surface Mount mounting style based on the listed product specifications.
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