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Microsemi
JAN2N7369
276-JAN2N7369
PDF Datasheet
Trans GP BJT PNP 80V 10A 3-Pin(3+Tab) TO-254
40 Weeks
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Tech Specifications
Collector Base Voltage (VCBO)
80V
Contact Plating
Tin, Lead
Max Collector Current
10A
Max Operating Temperature
125°C
Min Operating Temperature
-55°C
Max Power Dissipation
115W
Mount
Through Hole
RoHS Compliant
No
JAN2N7369 Description
Bipolar (BJT) Transistor PNP 80 V 10 A 115 W Through Hole TO-254AA
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