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Microsemi
JANTX2N6766
278-JANTX2N6766
PDF Datasheet
Power Field-Effect Transistor, 30A I(D), 200V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-3, 2 PIN
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Tech Specifications
Package/Case
TO-204AE
Contact Plating
Tin, Lead
Continuous Drain Current (ID)
30A
Drain to Source Voltage (Vdss)
200V
Gate to Source Voltage (Vgs)
20V
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
JANTX2N6766 Description
N-Channel 200 V 30A (Tc) 4W (Ta), 150W (Tc) Through Hole TO-3
FAQ
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