Microsemi_JANTXV2N3585
Microsemi_JANTXV2N3585
original

Microsemi
JANTXV2N3585

2087-JANTXV2N3585
PDF Datasheet
Power Bipolar Transistor, 2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN
36 Weeks

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ISO14001
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Tech Specifications

Package/Case
TO-66-2
Collector Base Voltage (VCBO)
500V
Collector Emitter Breakdown Voltage
300V
Collector-emitter Voltage-Max
750mV
Max Collector Current
2A
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
2.5W
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JANTXV2N3585 Description

Power Bipolar Transistor, 2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN

FAQ

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The listed voltage-related specification for JANTXV2N3585 is 500V.
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