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Microsemi
JANTXV2N6788U
278-JANTXV2N6788U
PDF Datasheet
Power Field-Effect Transistor, 4.5A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18/15
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Tech Specifications
Package/Case
CLCC
Continuous Drain Current (ID)
4.5A
Drain to Source Voltage (Vdss)
100V
Fall Time
70ns
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
800mW
JANTXV2N6788U Description
N-Channel 100 V 4.5A (Tc) 800mW (Tc) Surface Mount 18-ULCC (9.14x7.49)
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