


Microsemi
JANTXV2N6790U
278-JANTXV2N6790U
PDF Datasheet
Power Field-Effect Transistor, 2.8A I(D), 200V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18/15
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Responsible qualityTech Specifications
Package/Case
CLCC
Continuous Drain Current (ID)
2.8A
Drain to Source Voltage (Vdss)
200V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
800mW
Mount
Surface Mount
Package Quantity
1
JANTXV2N6790U Description
N-Channel 200 V 2.8A (Tc) 800mW (Tc) Surface Mount 18-ULCC (9.14x7.49)
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