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Microsemi
JANTXV2N7236
278-JANTXV2N7236
PDF Datasheet
Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3
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Tech Specifications
Package/Case
TO-254-3
Contact Plating
Tin, Lead
Continuous Drain Current (ID)
18A
Drain to Source Voltage (Vdss)
100V
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
JANTXV2N7236 Description
P-Channel 100 V 18A (Tc) 4W (Ta), 125W (Tc) Through Hole TO-254AA
FAQ
What package or case is JANTXV2N7236 available in?
JANTXV2N7236 is available in the TO-254-3 package / case.
What voltage specification is listed for JANTXV2N7236?
What is JANTXV2N7236?
What is the mounting type of JANTXV2N7236?
Is JANTXV2N7236 currently in stock?
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