Nexperia_GAN039-650NBBHP
original

Nexperia
GAN039-650NBBHP

278-GAN039-650NBBHP
PDF Datasheet
650 V, 33 MOHM GALLIUM NITRIDE (
12 Weeks

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Tech Specifications

Configuration
Single Hex Drain Quint Source
Maximum Gate Source Leakage Current (nA)
400
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Channel Mode
Enhancement
Product Status
Active
Drain to Source Voltage (Vdss)
650 V
Supplier Package
CCPAK
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GAN039-650NBBHP Description

Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the GAN039-650NBBHP belongs to can be classified under the Discrete Semiconductors. GAN039-650NBBHP is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. GAN039-650NBBHP provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Nexperia plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Nexperia is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Nexperia builds trust with consumers and enhances the overall reputation of their products.

FAQ

What is GAN039-650NBBHP?
GAN039-650NBBHP is a Single FETs, MOSFETs from Nexperia. This product page provides its main specifications, pricing information, availability, and inquiry options.
Is GAN039-650NBBHP currently in stock?
What is the standard lead time for GAN039-650NBBHP?
What operating temperature range does GAN039-650NBBHP support?
What voltage specification is listed for GAN039-650NBBHP?
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