Nexperia_GAN039-650NTBZ
original

Nexperia
GAN039-650NTBZ

278-GAN039-650NTBZ
PDF Datasheet
650 V, 33 MOHM GALLIUM NITRIDE (
12 Weeks

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Tech Specifications

Typical Input Capacitance @ Vds (pF)
1500@400V
Category
Power MOSFET
Configuration
Single Hex Drain Quint Source
HTS
8541.29.00.95
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
1980 pF @ 400 V
Number of Elements per Chip
1
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 10 V
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GAN039-650NTBZ Description

Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the GAN039-650NTBZ belongs to can be classified under the Discrete Semiconductors. GAN039-650NTBZ is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. GAN039-650NTBZ provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Nexperia plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Nexperia is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Nexperia builds trust with consumers and enhances the overall reputation of their products.

FAQ

What is GAN039-650NTBZ?
GAN039-650NTBZ is a Single FETs, MOSFETs from Nexperia. This product page provides its main specifications, pricing information, availability, and inquiry options.
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