Nexperia

NX7002AK

NX7002AK Description

The NX7002AK from Nexperia is an N-channel enhancement-mode Field-Effect Transistor (FET) housed in a compact SOT23 (TO-236AB) surface-mount package. Built using advanced Trench MOSFET (TMOS) technology, it delivers efficient switching performance with low gate charge and fast switching times. Key specifications include a maximum drain-source voltage (Vds) of 60V, a continuous drain current (Id) of 0.19A, and a low drain-source resistance (Rds(on)) of 4500mΩ at 10V gate drive. Its enhancement-mode operation ensures reliable control with a gate threshold voltage (Vgs(th)) of up to 2.1V, making it suitable for low-voltage applications.

NX7002AK Features

• Low Input Capacitance (15pF @10V) – Enables high-speed switching with minimal gate drive power.
• Fast Switching Performance – Typical turn-on delay (6ns), rise time (7ns), turn-off delay (11ns), and fall time (5ns) for efficient PWM applications.
• Low Leakage Current – Maximum gate-source leakage (2000nA) ensures stability in precision circuits.
• Compact SMD Package – SOT23 (3-pin) with a footprint of 3x1.4x1mm, ideal for space-constrained designs.
• Wide Operating Temperature Range – Supports -55°C to +150°C, suitable for industrial environments.
• RoHS Compliant & SVHC-Free – Meets environmental and regulatory standards.

NX7002AK Applications

• Load Switching – Efficient power management in portable devices, sensors, and IoT modules.
• Signal Amplification – Low-noise performance in audio and RF circuits.
• DC-DC Converters – Fast switching for buck/boost regulators in battery-powered systems.
• Automotive & Industrial Control – Reliable operation in harsh conditions due to high-temperature tolerance.
• Low-Power Drivers – Gate drive circuits for relays, LEDs, and small motors.

Conclusion of NX7002AK

The NX7002AK stands out as a high-performance, compact MOSFET for low-power, high-speed applications. Its low gate charge, fast switching, and robust SOT23 package make it ideal for modern electronics requiring efficiency and miniaturization. Whether used in power management, signal conditioning, or industrial systems, this FET combines reliability with Nexperia’s proven TMOS technology, offering a competitive edge over similar small-signal MOSFETs.