Nexperia_PDTA114ET,215
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Nexperia
PDTA114ET,215

292-PDTA114ET,215
PDF Datasheet
Trans Digital BJT PNP 50V 100mA 200mW Automotive 3-Pin SOT-23 T/R
4 Weeks

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Tech Specifications

Max Operating Temperature
150
Number of Terminals
3
Terminal Position
DUAL
JEDEC Package Code
TO-236AB
Pin Count
3
Number of Elements
1
Eccn Code
EAR99
HTS Code
8541.21.00.95
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PDTA114ET,215 Description

PDTA114ET,215 Description

The PDTA114ET,215 is a high-performance, single, pre-biased bipolar transistor designed and manufactured by Nexperia USA Inc. This PNP transistor is specifically designed for applications requiring a high breakdown voltage and low saturation voltage. With a maximum collector current of 100 mA and a maximum power dissipation of 250 mW, the PDTA114ET,215 is an ideal choice for a wide range of electronic circuits.

PDTA114ET,215 Features

  • Technical Specifications:

    • Maximum Collector Current (Ic): 100 mA
    • Maximum Collector-Emitter Breakdown Voltage (Vce): 50 V
    • Maximum Power Dissipation: 250 mW
    • DC Current Gain (hFE): Min 30 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
    • Maximum Collector Cutoff Current: 1µA
    • Base Resistor (R1): 10 kOhms
    • Emitter-Base Resistor (R2): 10 kOhms
  • Performance Benefits:

    • Low saturation voltage for improved efficiency
    • High breakdown voltage for increased reliability
    • Pre-biased design for ease of use in circuits
    • Surface mount packaging for compact design and high-density integration
  • Unique Features and Advantages:

    • The PDTA114ET,215 offers a combination of high breakdown voltage and low saturation voltage, making it ideal for applications requiring high efficiency and reliability.
    • The pre-biased design simplifies circuit design and reduces the need for additional biasing components.
    • The surface mount packaging allows for compact and high-density integration in electronic devices.

PDTA114ET,215 Applications

The PDTA114ET,215 is ideal for a wide range of applications, including:

  1. Switching Applications: Due to its low saturation voltage and high breakdown voltage, the PDTA114ET,215 is well-suited for switching applications where high efficiency and reliability are critical.
  2. Power Amplifiers: The PDTA114ET,215's high breakdown voltage and low saturation voltage make it an excellent choice for power amplifiers in audio and communication systems.
  3. Automotive Electronics: The PDTA114ET,215's ability to handle high voltages and currents makes it suitable for use in automotive electronics, such as power windows, seat controls, and lighting systems.
  4. Industrial Controls: The PDTA114ET,215's robust performance and reliability make it ideal for use in industrial control systems, where high efficiency and reliability are essential.

Conclusion of PDTA114ET,215

The PDTA114ET,215 is a high-performance, single, pre-biased bipolar transistor that offers a unique combination of high breakdown voltage and low saturation voltage. Its pre-biased design simplifies circuit design, while its surface mount packaging allows for compact and high-density integration. With its robust performance and reliability, the PDTA114ET,215 is an ideal choice for a wide range of applications, including switching, power amplifiers, automotive electronics, and industrial controls.

FAQ

What is PDTA114ET,215?
PDTA114ET,215 is a Single, Pre-Biased Bipolar Transistors from Nexperia. This product page provides its main specifications, pricing information, availability, and inquiry options.
What package or case is PDTA114ET,215 available in?
What is the standard lead time for PDTA114ET,215?
Does PDTA114ET,215 have quantity-based pricing?
Are there related or alternative parts for PDTA114ET,215?
Availability (In Stock : 6802 )
Quantity Unit Price Ext. Price
50+ $0.18893 $9.45
150+ $0.16687 $25.03
500+ $0.13933 $69.67
3000+ $0.12709 $381.27
6000+ $0.11975 $718.50
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