Nexperia_PMDXB600UNEZ
original

Nexperia
PMDXB600UNEZ

289-PMDXB600UNEZ
PDF Datasheet
PMDXB600UNE - 20 V, dual N-channel Trench MOSFET DFN 6-Pin
8 Weeks

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Tech Specifications

Number of Terminals
6
Terminal Position
DUAL
Pin Count
6
Number of Elements
2
REACH
Compliant
Military Spec
False

PMDXB600UNEZ Description

PMDXB600UNEZ Description

The PMDXB600UNEZ is a high-performance MOSFET from Nexperia, specifically designed for applications requiring efficient power management and high-speed switching. This 2N-channel MOSFET operates at a maximum drain-source voltage (Vdss) of 20V and can handle continuous drain currents (Id) up to 0.6A at 25°C. With a power rating of 265mW, it is suitable for a wide range of electronic devices.

PMDXB600UNEZ Features

  • Logic Level Gate: The PMDXB600UNEZ is designed to work with logic level gate signals, making it compatible with various digital circuits.
  • Low Input Capacitance: With a maximum input capacitance (Ciss) of 21.3pF @ 10V, this MOSFET offers fast switching speeds and reduced power consumption.
  • Low Gate Charge: The maximum gate charge (Qg) is 0.7nC @ 4.5V, contributing to the device's high-speed performance.
  • TrenchFET® Series: The PMDXB600UNEZ belongs to the TrenchFET® series, known for its superior performance and reliability.
  • Surface Mount Technology: The device is mounted using surface mount technology, which allows for compact designs and efficient heat dissipation.
  • RoHS3 Compliant: The PMDXB600UNEZ is compliant with the RoHS3 directive, making it an environmentally friendly choice.

PMDXB600UNEZ Applications

The PMDXB600UNEZ is ideal for various applications where high-speed switching and efficient power management are crucial:

  • Automotive Electronics: Due to its high voltage and current ratings, the PMDXB600UNEZ is suitable for automotive applications such as power windows, seat controls, and lighting systems.
  • Industrial Control Systems: This MOSFET can be used in motor drives, power supplies, and other control systems that require high-speed switching and low power consumption.
  • Telecommunications: The PMDXB600UNEZ can be employed in power amplifiers, signal processing circuits, and other high-speed communication equipment.

Conclusion of PMDXB600UNEZ

The PMDXB600UNEZ from Nexperia is a versatile and high-performance MOSFET that offers a combination of high voltage and current ratings, low input capacitance, and fast switching speeds. Its compatibility with logic level gate signals and RoHS3 compliance make it an excellent choice for a wide range of applications in automotive, industrial, and telecommunications sectors. With its unique features and advantages over similar models, the PMDXB600UNEZ is a reliable and efficient solution for demanding electronic devices.

FAQ

What is PMDXB600UNEZ?
PMDXB600UNEZ is a FET, MOSFET Arrays from Nexperia. This product page provides its main specifications, pricing information, availability, and inquiry options.
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