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PMN27XPEAX
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PMN27XPEAX Description
PMN27XPEAX Description
The PMN27XPEAX is a P-channel MOSFET from Nexperia, designed for high-efficiency power management in automotive and industrial applications. With a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 4.4A, this MOSFET offers robust performance in compact 6TSOP surface-mount packaging. Its low on-resistance (Rds(on)) of 30mOhm at 3A, 4.5V ensures minimal conduction losses, while the gate charge (Qg) of 22.5nC at 4.5V enables fast switching for high-frequency applications.
PMN27XPEAX Features
- Automotive-Grade Reliability: Compliant with AEC-Q101 standards, ensuring durability in harsh environments.
- Low Power Dissipation: 530mW (Ta) / 8.33W (Tc) thermal performance for efficient heat management.
- Optimized Gate Drive: Drive voltage range of 2.5V–4.5V for compatibility with low-voltage controllers.
- Fast Switching: Low input capacitance (Ciss) of 1770pF at 10V reduces switching losses.
- RoHS3 & REACH Compliant: Environmentally friendly and suitable for global markets.
- Obsolete Status: While no longer in production, it remains a viable choice for legacy designs.
PMN27XPEAX Applications
- DC-DC Converters: Ideal for synchronous buck/boost circuits due to low Rds(on) and fast switching.
- Load Switching: Used in battery management systems (BMS) and power distribution modules.
- Automotive Electronics: Suitable for LED drivers, infotainment systems, and ECU power controls.
- Portable Devices: Efficient power routing in USB-C PD modules and mobile accessories.
Conclusion of PMN27XPEAX
The PMN27XPEAX excels in high-efficiency, compact power designs, particularly in automotive and industrial systems. Its low conduction losses, fast switching, and robust packaging make it a reliable choice for engineers seeking performance in space-constrained applications. While marked as obsolete, its proven reliability ensures continued suitability for legacy or long-lifecycle projects. For modern alternatives, consult Nexperia’s latest MOSFET portfolio.





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