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PMPB27EP,115

PMPB27EP,115 Description

The PMPB27EP,115 from Nexperia is a P-channel MOSFET housed in a compact DFN2020MD-6 package, designed for high-efficiency power management in space-constrained applications. With a 30V drain-to-source voltage (Vdss) and 6.1A continuous drain current (Id), it delivers robust performance in low-voltage circuits. The device features a low on-resistance (Rds(on)) of 29mΩ at 10V gate drive, minimizing conduction losses and improving thermal efficiency. Its ±20V gate-source voltage (Vgs) tolerance ensures reliability in demanding environments.

PMPB27EP,115 Features

• Low Rds(on): 29mΩ @ 6.1A, 10V, enhancing power efficiency.
• High Current Handling: 6.1A continuous drain current (Ta) for power-dense designs.
• Optimized Gate Charge: 45nC @ 10V (Qg), enabling fast switching and reduced losses.
• Wide Vgs Range: ±20V, offering flexibility in drive circuitry.
• Compact DFN2020MD-6 Package: Ideal for high-density PCB layouts.
• Low Input Capacitance (Ciss): 1570pF @ 15V, improving high-frequency performance.
• RoHS3 & REACH Compliant: Meets environmental and regulatory standards.
• Power Dissipation: 1.7W (Ta) / 12.5W (Tc), ensuring thermal stability.

PMPB27EP,115 Applications

This MOSFET is ideal for:

• Load Switching: Efficient power distribution in portable devices.
• DC-DC Converters: Synchronous rectification in step-down/step-up circuits.
• Battery Management Systems (BMS): Protection and control in Li-ion/polymer packs.
• Motor Drives: Low-side switching in brushed DC motors.
• Power Tools & Consumer Electronics: Compact, high-current solutions.

Conclusion of PMPB27EP,115

The PMPB27EP,115 combines low Rds(on), high current capability, and a miniature footprint, making it a superior choice for modern power electronics. Its fast switching, thermal efficiency, and compliance with environmental standards position it as a versatile solution for portable, automotive, and industrial applications. Engineers benefit from its reliability, space savings, and performance edge over comparable P-channel MOSFETs.