Nexperia
PSMN1R4-40YLDX

278-PSMN1R4-40YLDX
PDF Datasheet
PSMN1R4-40YLD - N-channel 40 V, 1.4 mΩ, 240 A logic level MOSFET in LFPAK56 usingtttNextPower-S3 technology SOIC 4-Pin
20 Weeks

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Tech Specifications

Number of Terminals
4
Terminal Position
SINGLE
JEDEC Package Code
MO-235
Pin Count
4
Number of Elements
1
REACH
Compliant
Military Spec
False

PSMN1R4-40YLDX Description

PSMN1R4-40YLDX Description

The PSMN1R4-40YLDX is a high-performance MOSFET (Metal Oxide) from Nexperia USA Inc., designed for applications requiring high power dissipation and efficient switching. This N-Channel MOSFET features a drain to source voltage (Vdss) of 40V, a continuous drain current (Id) of 100A at 25°C, and a maximum power dissipation of 238W at the junction temperature (Tc). The device is surface mountable and comes in a tape & reel (TR) packaging, making it suitable for automated assembly processes.

PSMN1R4-40YLDX Features

  • High Input Capacitance (Ciss): The PSMN1R4-40YLDX boasts an impressive input capacitance of 6661 pF at 20V, which contributes to its fast switching capabilities and reduced signal distortion.
  • Low Gate Charge (Qg): With a maximum gate charge of 96 nC at 10V, this MOSFET offers efficient gate drive and reduced switching losses.
  • Robust Voltage Handling: The device can handle a maximum gate-source voltage (Vgs) of ±20V, ensuring reliable operation in various applications.
  • Low On-State Resistance (Rds On): The PSMN1R4-40YLDX has a maximum Rds On of 1.4mOhm at 25A and 10V, which minimizes power losses during conduction.
  • Compliance with Industry Standards: The product is compliant with the RoHS3 standard, making it suitable for environmentally friendly applications. It is also REACH unaffected, ensuring compliance with European chemical regulations.
  • Moisture Sensitivity Level (MSL) 1: This indicates that the device can be stored and handled without special precautions, simplifying logistics and inventory management.

PSMN1R4-40YLDX Applications

The PSMN1R4-40YLDX is ideal for applications that demand high power handling and efficient switching. Some specific use cases include:

  • Power Electronics: The device's high voltage and current ratings make it suitable for power conversion and regulation in various electronic systems.
  • Automotive Applications: The PSMN1R4-40YLDX can be used in electric and hybrid vehicles for applications such as battery management, motor control, and power distribution.
  • Industrial Control Systems: The MOSFET's robustness and efficiency make it suitable for motor drives, power supplies, and other control systems in industrial environments.

Conclusion of PSMN1R4-40YLDX

The PSMN1R4-40YLDX from Nexperia USA Inc. is a versatile and high-performance MOSFET that offers a unique combination of high input capacitance, low gate charge, and robust voltage handling. Its compliance with industry standards and moisture sensitivity level make it an excellent choice for a wide range of applications, including power electronics, automotive systems, and industrial control. With its advanced features and Nexperia's reputation for quality, the PSMN1R4-40YLDX is a reliable choice for engineers looking to optimize their designs for performance and efficiency.

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Availability (In Stock : 179 )
Quantity Unit Price Ext. Price
1+ $2.59543 $2.60
10+ $2.56457 $25.65
30+ $2.54572 $76.37
100+ $2.52515 $252.51
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