Nexperia_PSMN3R7-100BSEJ
original

Nexperia
PSMN3R7-100BSEJ

278-PSMN3R7-100BSEJ
PDF Datasheet
MOSFET N-CH 100V 120A D2PAK
15 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
98
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
16370 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs
246 nC @ 10 V
Typical Rise Time (ns)
64
PPAP
No
Channel Mode
Enhancement
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PSMN3R7-100BSEJ Description

PSMN3R7-100BSEJ Description

The PSMN3R7-100BSEJ from Nexperia is a high-performance N-channel MOSFET designed for demanding power management applications. With a 100V drain-to-source voltage (Vdss) and 120A continuous drain current (Id), this device is engineered to deliver robust performance in high-power circuits. Packaged in a D2PAK (TO-263) surface-mount configuration, it combines high current handling with efficient thermal dissipation, making it suitable for compact, high-density designs. The MOSFET operates within a wide temperature range of up to 175°C (TJ) and features a low on-resistance (Rds(on)) of 3.95mΩ at 10V gate drive, ensuring minimal conduction losses.

PSMN3R7-100BSEJ Features

  • Ultra-Low Rds(on): 3.95mΩ @ 25A, 10V reduces power dissipation and improves efficiency.
  • High Current Capability: 120A continuous drain current (Ta) supports high-load applications.
  • Optimized Gate Charge: 246nC (Qg) @ 10V ensures fast switching performance, reducing switching losses.
  • Robust Voltage Ratings: 100V Vdss and ±20V Vgs(max) provide reliability in harsh environments.
  • Thermal Efficiency: 405W (Ta) power dissipation and D2PAK package enhance heat management.
  • Compliance & Reliability: ROHS3 compliant, REACH unaffected, and MSL1 (unlimited) for environmental and handling robustness.

PSMN3R7-100BSEJ Applications

This MOSFET is ideal for:

  • Switched-Mode Power Supplies (SMPS): High efficiency and low Rds(on) minimize energy loss.
  • Motor Drives & Inverters: High current handling and thermal performance suit industrial motor control.
  • Automotive Systems: Reliability under high temperatures and voltages makes it suitable for electric vehicles (EVs) and battery management.
  • DC-DC Converters: Fast switching and low gate charge optimize performance in high-frequency designs.
  • UPS & Power Tools: Combines high power density with ruggedness for heavy-duty applications.

Conclusion of PSMN3R7-100BSEJ

The PSMN3R7-100BSEJ stands out as a high-efficiency, high-current MOSFET with superior thermal and electrical characteristics. Its low Rds(on), high current rating, and robust packaging make it an excellent choice for power electronics requiring reliability and performance. Whether in industrial, automotive, or consumer applications, this device offers a competitive edge in efficiency and power density. Nexperia’s commitment to quality ensures compliance with stringent industry standards, making it a dependable solution for modern power systems.

FAQ

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