Nexperia

PSMN4R8-100BSEJ

PSMN4R8-100BSEJ is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Nexperia. It is a N-channel enhancement mode logic level FET with a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 4.2A.

Description:

The PSMN4R8-100BSEJ is a high voltage MOSFET that is designed for use in a wide range of applications. It features a low on-state resistance (RDS(on)) of 8.5 mOhm max, which allows for efficient power switching with minimal power loss. The device also has a fast switching time, making it suitable for high frequency applications.

Features:

• N-channel, enhancement mode logic level FET
• VDS of 100V
• ID of 4.2A
• RDS(on) of 8.5 mOhm max
• Fast switching time

Applications:

The PSMN4R8-100BSEJ is suitable for a wide range of applications, including:

1. Motor control
2. Switch mode power supplies (SMPS)
3. Battery chargers
4. DC-DC converters
5. Class D audio amplifiers
6. LED lighting
7. Industrial control systems

In summary, the PSMN4R8-100BSEJ is a high voltage MOSFET that offers efficient power switching and fast switching times, making it suitable for a wide range of applications.