NTE Electronics, Inc._MJE3055T
original

NTE Electronics, Inc.
MJE3055T

276-MJE3055T
PDF Datasheet
TRANS NPN 60V 10A TO220

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Tech Specifications

Operating Temperature
-55°C ~ 150°C (TJ)
Frequency - Transition
2MHz
Current - Collector (Ic) (Max)
10 A
Vce Saturation (Max) @ Ib, Ic
8V @ 3.3A, 10A
ECCN
EAR99
Mounting Type
Through Hole
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
60 V
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MJE3055T Description

MJE3055T Description

The MJE3055T is a high-performance NPN bipolar transistor designed and manufactured by NTE Electronics, Inc. This single Bipolar Transistor features a 2MHz frequency transition, making it suitable for a wide range of applications that require high-speed switching and amplification. With a maximum collector current (Ic) of 10A and a maximum power rating of 75W, the MJE3055T is capable of handling demanding loads while maintaining excellent performance.

MJE3055T Features

  • Technical Specifications:

    • Frequency - Transition: 2MHz
    • Current - Collector (Ic) (Max): 10A
    • Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • Transistor Type: NPN
    • Power - Max: 75W
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
  • Performance Benefits:

    • High current handling capability (10A) for efficient power management
    • Low saturation voltage (8V) for improved efficiency in low-voltage applications
    • High frequency transition (2MHz) for fast switching and amplification
    • Robust power rating (75W) for handling demanding loads
  • Unique Features and Advantages:

    • Through-hole mounting type for easy integration into existing designs
    • Active product status, ensuring ongoing availability and support
    • RoHS3 compliant, adhering to environmental regulations and reducing environmental impact

MJE3055T Applications

The MJE3055T is ideal for various applications that require high-speed switching, high current handling, and robust power management. Some specific use cases include:

  1. Power Amplifiers: Utilize the MJE3055T's high current and power ratings for efficient amplification in audio and radio frequency applications.
  2. Switching Regulators: Leverage the low saturation voltage and high frequency transition for efficient power conversion in switching regulators.
  3. Motor Controls: Benefit from the high current handling capability for controlling high-power motors in industrial and automotive applications.
  4. RF Amplifiers: Take advantage of the 2MHz frequency transition for amplifying radio frequency signals in communication systems.

Conclusion of MJE3055T

The MJE3055T is a versatile and high-performance NPN bipolar transistor that offers a unique combination of high current handling, low saturation voltage, and high frequency transition. Its robust power rating, active product status, and RoHS3 compliance make it an excellent choice for a wide range of applications, including power amplifiers, switching regulators, motor controls, and RF amplifiers. With its unique features and advantages, the MJE3055T stands out as a reliable and efficient solution for demanding electronic designs.

FAQ

Are there related or alternative parts for MJE3055T?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What operating temperature range does MJE3055T support?
What is MJE3055T?
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