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A2T21H410-24SR6

A2T21H410-24SR6 Description

The A2T21H410-24SR6 from NXP Semiconductors is a high-performance RF MOSFET utilizing LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology, designed for demanding RF power amplification applications. Operating at a frequency of 2.17GHz, this device delivers 72W output power with a voltage rating of 65V and a test voltage of 28V, making it suitable for high-efficiency RF systems. Packaged in Tape & Reel (TR) for automated assembly, it features a chassis mount configuration, ensuring robust thermal and mechanical stability. The 15.6dB gain enhances signal amplification, while its dual configuration supports balanced RF designs.

A2T21H410-24SR6 Features

• High Power Output: 72W at 2.17GHz, ideal for high-power RF applications.
• LDMOS Technology: Ensures high efficiency, linearity, and thermal stability.
• Wide Voltage Range: Rated at 65V, tested at 28V for reliable performance.
• High Gain: 15.6dB minimizes the need for additional amplification stages.
• Dual Configuration: Supports balanced RF circuitry for improved signal integrity.
• Robust Packaging: Chassis mount and TR packaging enhance durability and ease of integration.
• Compliance: ROHS3 Compliant and REACH Unaffected, meeting environmental standards.

A2T21H410-24SR6 Applications

This RF MOSFET excels in applications requiring high-power RF amplification, including:

• Base Station Transmitters: For cellular and wireless communication infrastructure.
• Broadcast Equipment: High-power RF amplification in TV and radio transmitters.
• Military & Aerospace: Reliable performance in radar and secure communication systems.
• Industrial RF Systems: Used in RF heating, plasma generation, and medical diathermy.
• Amateur Radio (HAM): High-efficiency amplification for long-range communication.

Conclusion of A2T21H410-24SR6

The A2T21H410-24SR6 stands out as a high-power, high-gain RF MOSFET, leveraging LDMOS technology for superior efficiency and thermal performance. Its dual configuration, robust packaging, and compliance with environmental standards make it a preferred choice for demanding RF applications. While marked as obsolete, its performance characteristics ensure continued relevance in legacy and specialized systems. Engineers seeking a reliable, high-performance RF amplifier for telecom, broadcast, or industrial applications will find this component exceptionally capable.