NXP Semiconductors_A5G26H605W19NR3
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NXP Semiconductors
A5G26H605W19NR3

278-A5G26H605W19NR3
PDF Datasheet
GaN FETs Airfast RF Power GaN Transistor, 2496-2690 MHz, 85 W Avg., 48 V
26 Weeks

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Tech Specifications

Mounting Style
SMD/SMT
Output Power
85 W
Minimum Operating Frequency
2.496 GHz
Id - Continuous Drain Current
-
Transistor Polarity
-
RoHS
RoHS Compliant
Minimum Operating Temperature
- 55 C
Vds - Drain-Source Breakdown Voltage
125 V
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A5G26H605W19NR3 Description

Reel provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the A5G26H605W19NR3 belongs to can be classified under the Discrete Semiconductors. A5G26H605W19NR3 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. A5G26H605W19NR3 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. NXP Semiconductors plays a crucial role in ensuring the smooth flow of goods and meeting market demand. NXP Semiconductors is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, NXP Semiconductors builds trust with consumers and enhances the overall reputation of their products.

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