NXP Semiconductors_BFU530AR
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NXP Semiconductors
BFU530AR

283-BFU530AR
PDF Datasheet
RF TRANS NPN 12V 11GHZ TO236AB
13 Weeks

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Tech Specifications

Configuration
Single
Maximum Power 1dB Compression (dBm)
10.5(Typ)
Typical Power Gain (dB)
23.5
PPAP
Yes
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
12V
Automotive
Yes
Maximum 3rd Order Intercept Point (dBm)
20(Typ)
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BFU530AR Description

BFU530AR Description

The BFU530AR is a high-performance, automotive-grade NPN bipolar RF transistor designed for applications requiring high-frequency signal amplification and switching. Manufactured by NXP Semiconductors, this device is part of the Bipolar RF Transistors category and offers a range of advanced features that make it ideal for various demanding applications.

BFU530AR Features

  • Frequency - Transition: The BFU530AR boasts an impressive transition frequency of 11 GHz, making it suitable for high-frequency applications such as satellite communication, radar systems, and wireless communication.
  • Current - Collector (Ic) (Max): This device can handle a maximum collector current of 40 mA, ensuring reliable performance in various high-current applications.
  • Voltage - Collector Emitter Breakdown (Max): With a maximum collector-emitter breakdown voltage of 12 V, the BFU530AR is designed to operate in high-voltage environments.
  • Power - Max: The BFU530AR can handle a maximum power dissipation of 450 mW, making it suitable for applications requiring high power amplification.
  • Gain: This transistor offers an impressive gain of 18 dB, providing excellent signal amplification capabilities.
  • Noise Figure: The BFU530AR has a low noise figure of 0.6 dB at 900 MHz, ensuring clear and reliable signal transmission.
  • DC Current Gain (hFE) (Min): This device has a minimum DC current gain of 60 at 10 mA, 8 V, ensuring consistent performance across various operating conditions.
  • Mounting Type: The BFU530AR is designed for surface mount applications, making it suitable for use in compact and densely populated electronic devices.
  • RoHS Status: This device is compliant with the RoHS3 directive, ensuring environmental compliance and suitability for use in environmentally conscious applications.

BFU530AR Applications

The BFU530AR is ideal for a wide range of high-frequency applications, including:

  • Satellite Communication: The high transition frequency and low noise figure make the BFU530AR an excellent choice for satellite communication systems.
  • Radar Systems: This device's high-frequency capabilities and high power dissipation make it suitable for use in radar systems, where high signal amplification and switching are required.
  • Wireless Communication: The BFU530AR's high gain and low noise figure make it ideal for use in wireless communication systems, such as cellular networks and Wi-Fi devices.
  • Automotive Applications: The automotive-grade rating and surface mount design make the BFU530AR suitable for use in automotive electronics, such as infotainment systems and advanced driver assistance systems (ADAS).

Conclusion of BFU530AR

The BFU530AR is a high-performance, automotive-grade NPN bipolar RF transistor that offers a range of advanced features, including high transition frequency, low noise figure, and high power dissipation. Its unique combination of technical specifications and performance benefits make it an ideal choice for a wide range of high-frequency applications, including satellite communication, radar systems, wireless communication, and automotive electronics. With its RoHS3 compliance and surface mount design, the BFU530AR is a reliable and environmentally friendly solution for demanding high-frequency applications.

FAQ

Are there related or alternative parts for BFU530AR?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What voltage specification is listed for BFU530AR?
What package or case is BFU530AR available in?
What is the standard lead time for BFU530AR?
What is the mounting type of BFU530AR?
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