NXP Semiconductors_BFU550R
original

NXP Semiconductors
BFU550R

283-BFU550R
PDF Datasheet
RF TRANS NPN 12V 11GHZ SOT143B
13 Weeks

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Tech Specifications

Configuration
Single Dual Emitter
Maximum Power 1dB Compression (dBm)
13.5(Typ)
Typical Power Gain (dB)
26.5
PPAP
Yes
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
12V
Automotive
Yes
Maximum 3rd Order Intercept Point (dBm)
23(Typ)
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BFU550R Description

BFU550R Description

The BFU550R is a high-performance NPN Bipolar RF Transistor designed and manufactured by NXP Semiconductors. This automotive-grade device offers exceptional performance in a compact SOT143B package. With a frequency transition of 11 GHz, the BFU550R is ideal for high-frequency applications. It features a maximum collector current (Ic) of 50 mA and a collector-emitter breakdown voltage of 12 V. The device is RoHS3 compliant and REACH unaffected, ensuring environmental compliance.

BFU550R Features

  • High Frequency Performance: With a frequency transition of 11 GHz, the BFU550R delivers outstanding performance in high-frequency applications.
  • Automotive Grade: Designed for use in automotive applications, the BFU550R meets the stringent requirements of the automotive industry.
  • Compact Package: The SOT143B package allows for easy integration into compact designs.
  • Low Noise Figure: A typical noise figure of 0.7 dB at 900 MHz ensures minimal signal degradation.
  • High Gain: The BFU550R provides a gain of 21 dB, making it suitable for applications requiring high amplification.
  • Robust Power Handling: Capable of handling up to 450 mW of power, the BFU550R is well-suited for demanding applications.

BFU550R Applications

The BFU550R is ideal for a variety of high-frequency applications, including:

  1. Automotive Radar Systems: The high-frequency performance and automotive-grade design make the BFU550R perfect for automotive radar systems.
  2. RF Amplifiers: The high gain and low noise figure make the BFU550R an excellent choice for RF amplifiers in communication systems.
  3. Wireless Communication Systems: The BFU550R's high-frequency capabilities make it suitable for use in wireless communication systems, such as Wi-Fi and Bluetooth.
  4. Satellite Communication Systems: The BFU550R's high-frequency performance and power handling capabilities make it ideal for satellite communication systems.

Conclusion of BFU550R

The BFU550R from NXP Semiconductors is a high-performance NPN Bipolar RF Transistor that offers exceptional high-frequency performance, low noise figure, and high gain in a compact SOT143B package. Its automotive-grade design, RoHS3 compliance, and REACH unaffected status make it an ideal choice for a wide range of high-frequency applications, including automotive radar systems, RF amplifiers, and wireless communication systems. With its unique combination of performance, reliability, and environmental compliance, the BFU550R stands out as a superior choice in the Bipolar RF Transistor market.

FAQ

What operating temperature range does BFU550R support?
BFU550R has an operating temperature range of -40°C ~ 150°C (TJ).
Are there related or alternative parts for BFU550R?
What voltage specification is listed for BFU550R?
What is the mounting type of BFU550R?
Is BFU550R currently in stock?
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