NXP Semiconductors_BFU760F,115
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NXP Semiconductors
BFU760F,115

283-BFU760F,115
PDF Datasheet
RF TRANS NPN 2.8V 45GHZ 4DFP
26 Weeks

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Tech Specifications

Configuration
Single Dual Emitter
Maximum Power 1dB Compression (dBm)
18.5(Typ)
Typical Power Gain (dB)
25.5
PPAP
No
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
2.8V
Automotive
No
Maximum 3rd Order Intercept Point (dBm)
33(Typ)
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BFU760F,115 Description

BFU760F,115 Description

The BFU760F,115 is a high-performance Bipolar RF Transistor from NXP Semiconductors, designed for applications requiring exceptional signal integrity and low noise. With an operating temperature of 150°C (TJ) and a frequency transition of 45GHz, this NPN transistor is well-suited for high-frequency communication systems. The BFU760F,115 delivers a maximum collector current of 70mA and can handle up to 220mW of power, making it ideal for demanding RF applications.

BFU760F,115 Features

  • High Operating Temperature (150°C TJ): Ensures reliable performance in extreme conditions.
  • 45GHz Frequency Transition: Supports high-speed data transmission and communication.
  • 70mA Maximum Collector Current (Ic): Provides ample current for driving various loads.
  • 220mW Maximum Power Handling: Allows for efficient power management in high-power applications.
  • Low Noise Figure (0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz): Minimizes signal degradation for improved performance.
  • NPN Transistor Type: Offers excellent current gain and switching speed.
  • Surface Mount Technology: Facilitates easy integration into compact, high-density designs.
  • Active Product Status: Ensures ongoing availability and support from NXP Semiconductors.

BFU760F,115 Applications

The BFU760F,115 is an ideal choice for a variety of high-frequency applications, including:

  • RF and Microwave Communication Systems: Its high-frequency capabilities make it suitable for use in communication systems requiring fast data transmission.
  • Satellite and Radar Systems: The low noise figure and high power handling make it ideal for signal processing in these demanding environments.
  • Wireless Local Area Networks (WLAN): Its ability to handle high power and high frequencies makes it well-suited for use in WLAN applications.
  • Automotive Radar Systems: The BFU760F,115's high operating temperature and moisture sensitivity level make it a reliable choice for automotive applications.

Conclusion of BFU760F,115

The BFU760F,115 from NXP Semiconductors is a versatile and high-performance Bipolar RF Transistor that offers a unique combination of high-frequency capabilities, low noise figure, and robust power handling. Its surface mount technology and active product status make it an excellent choice for a wide range of high-frequency communication and signal processing applications. With its superior performance and reliability, the BFU760F,115 stands out as a top choice for engineers designing cutting-edge electronic systems.

FAQ

What is BFU760F,115?
BFU760F,115 is a Bipolar RF Transistors from NXP Semiconductors. This product page provides its main specifications, pricing information, availability, and inquiry options.
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