NXP Semiconductors_BGU8H1X
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NXP Semiconductors
BGU8H1X

860-BGU8H1X
PDF Datasheet
IC AMP LTE 2.3GHZ-2.7GHZ 6XSON
13 Weeks

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Tech Specifications

Number of Channels per Chip
1
Power Supply Type
Single
PCB changed
6
HTS
8542.33.00.01
Maximum Reverse Isolation (dB)
22(Typ)@2655MHz
Typical Power Gain (dB)
12.5@2655MHz
ECCN (US)
EAR99
PPAP
No
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BGU8H1X Description

BGU8H1X Description

The BGU8H1X is a high-performance RF amplifier designed and manufactured by NXP Semiconductors, a leading global provider of semiconductors. This device is specifically engineered for LTE and WiMax applications, offering a frequency range of 2.3GHz to 2.69GHz. With a surface mount design, it ensures easy integration into various electronic systems. The BGU8H1X operates within a supply voltage range of 1.5V to 3.1V and a current supply of 5mA, making it energy-efficient and suitable for a wide range of applications.

BGU8H1X Features

  • Mounting Type: Surface Mount, facilitating easy installation and integration into electronic systems.
  • Current - Supply: 5mA, ensuring low power consumption and extended battery life in portable devices.
  • Voltage - Supply: 1.5V to 3.1V, providing flexibility in power supply options.
  • Test Frequency: 3.35GHz, demonstrating the device's ability to handle high-frequency signals.
  • Frequency: 2.3GHz to 2.69GHz, covering the essential frequency bands for LTE and WiMax applications.
  • Noise Figure: 0.9dB, indicating low noise levels and high signal integrity.
  • Package: Bulk, offering cost-effectiveness for high-volume applications.
  • RF Type: LTE, WiMax, making it suitable for modern wireless communication systems.
  • Gain: 13dB, providing significant amplification of weak signals.

BGU8H1X Applications

The BGU8H1X is ideal for a variety of applications where high-frequency signal amplification is required. Some specific use cases include:

  • Mobile Devices: Enhancing signal strength in smartphones and tablets for improved connectivity.
  • Base Stations: Amplifying signals in cellular base stations to cover larger areas and improve signal quality.
  • Wi-Fi Routers: Boosting Wi-Fi signals to extend coverage and ensure reliable connections.
  • Satellite Communications: Amplifying signals in satellite communication systems for long-distance data transmission.

Conclusion of BGU8H1X

The BGU8H1X from NXP Semiconductors is a versatile and high-performing RF amplifier designed for LTE and WiMax applications. Its unique combination of low power consumption, wide frequency range, and high gain make it an excellent choice for a variety of wireless communication systems. With its surface mount design and low noise figure, the BGU8H1X offers superior performance and reliability in demanding applications.

FAQ

What voltage specification is listed for BGU8H1X?
The listed voltage-related specification for BGU8H1X is 1.5V ~ 3.1V.
What package or case is BGU8H1X available in?
What is BGU8H1X?
Are there related or alternative parts for BGU8H1X?
What is the standard lead time for BGU8H1X?
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