NXP Semiconductors_MGD3100BM58EKR2
original

NXP Semiconductors
MGD3100BM58EKR2

730-MGD3100BM58EKR2
PDF Datasheet
GATE DRIVERS GATE DRIVER, HV ISO
52 Weeks

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Tech Specifications

Product
IGBT, SiC Gate Driver
Gate Type
IGBT, N-Channel MOSFET
Product Status
Active
RoHS
RoHS Compliant
Supplier Package
SOIC W
Package / Case
32-BSSOP (0.295", 7.50mm Width)
Number of Channels
1 Channel
Technology
SiC
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MGD3100BM58EKR2 Description

This electronic device regards Tape & Reel (TR) method as the top priority. This MGD3100BM58EKR2 packaging method makes it simple and quick to package big quantities of powdered commodities. This MGD3100BM58EKR2 is produced by this NXP Semiconductors in order to provide enough products to meet consumers’ demand. The blueprint of this NXP Semiconductors is to keep pace with the growth of world’s leading level of science and technology. This MGD3100BM58EKR2 belongs to Gate Drivers ICs category. It’s previous category pertains to Power Management (PMIC). Complete power supply systems can be implemented using Power Management Integrated Circuits (PMICs). It combines several voltage regulators and control circuits onto a single chip. They simplify and cost-effectively manage system power management while reducing component count and board area. This MGD3100BM58EKR2 is a great fit for embedded processing in a variety of applications. They are includes edge computing, the Internet of Things (IoT), industrial and medical IoT, electric vehicles (EVs), and autonomous cars.

FAQ

What operating temperature range does MGD3100BM58EKR2 support?
MGD3100BM58EKR2 has an operating temperature range of -40°C ~ 125°C (TA).
Does MGD3100BM58EKR2 have quantity-based pricing?
Is MGD3100BM58EKR2 currently in stock?
What is the mounting type of MGD3100BM58EKR2?
What is the standard lead time for MGD3100BM58EKR2?
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